5秒后页面跳转
BZT52B10-V-G PDF预览

BZT52B10-V-G

更新时间: 2024-02-05 22:22:21
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 108K
描述
DIODE 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode

BZT52B10-V-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.62配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:10 V
表面贴装:YES技术:ZENER
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:2%工作测试电流:5 mA
Base Number Matches:1

BZT52B10-V-G 数据手册

 浏览型号BZT52B10-V-G的Datasheet PDF文件第2页浏览型号BZT52B10-V-G的Datasheet PDF文件第3页浏览型号BZT52B10-V-G的Datasheet PDF文件第4页浏览型号BZT52B10-V-G的Datasheet PDF文件第5页浏览型号BZT52B10-V-G的Datasheet PDF文件第6页浏览型号BZT52B10-V-G的Datasheet PDF文件第7页 
BZT52-V-G-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon planar power zener diodes  
• These diodes are also available in other  
case styles and other configurations  
including: the SOT-23 case with type  
designation BZX84 series, the dual zener  
diode common anode configuration in the  
SOT-23 case with type designation AZ23  
series and the dual zener diode common  
cathode configuration in the SOT-23 case with  
type designation DZ23 series.  
17431  
• The zener voltages are graded according to the  
international E 24 standard.  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123  
Weight: approx. 9.4 mg  
Packaging codes/options:  
18/10 k per 13 " reel (8 mm tape), 10 k/box  
08/3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Zener current see table  
" Characteristics "  
500 2)  
410 1)  
Ptot  
Ptot  
Power dissipation  
Power dissipation  
mW  
mW  
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas  
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
300 1)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
TJ  
Junction temperature  
150  
°C  
°C  
TS  
Storage temperature range  
- 65 to + 150  
1) Valid provided that electrodes are kept at ambient temperature  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number 83340  
Rev. 1.1, 26-Aug-10  
www.vishay.com  
1

与BZT52B10-V-G相关器件

型号 品牌 获取价格 描述 数据表
BZT52B10-V-G08 VISHAY

获取价格

DIODE 10 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Volt
BZT52B10-V-G18 VISHAY

获取价格

DIODE 10 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Volt
BZT52B10V-T RECTRON

获取价格

Zener Diode,
BZT52-B10X ETC

获取价格

DIODE ZENER 10V 590MW SOD123
BZT52B11 VISHAY

获取价格

Small Signal Zener Diodes
BZT52B11 WEITRON

获取价格

Surface Mount Zener Diodes
BZT52B11 TAYCHIPST

获取价格

Small Signal Diode
BZT52B11 YANGJIE

获取价格

Zener Diode, 11V V(Z), 2%, 0.5W, Silicon, Unidirectional,
BZT52B11 GOOD-ARK

获取价格

Zener Diode
BZT52B11 TSC

获取价格

500mW, 2% Tolerance SMD Zener Diode