5秒后页面跳转
BZT52-C75 PDF预览

BZT52-C75

更新时间: 2024-02-07 07:31:48
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 193K
描述
Single Zener diodes in a SOD123 packageProduction

BZT52-C75 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.25Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
标称参考电压:75 V表面贴装:YES
技术:ZENER端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%Base Number Matches:1

BZT52-C75 数据手册

 浏览型号BZT52-C75的Datasheet PDF文件第1页浏览型号BZT52-C75的Datasheet PDF文件第2页浏览型号BZT52-C75的Datasheet PDF文件第4页浏览型号BZT52-C75的Datasheet PDF文件第5页浏览型号BZT52-C75的Datasheet PDF文件第6页浏览型号BZT52-C75的Datasheet PDF文件第7页 
Nexperia  
BZT52 series  
Single Zener diodes in a SOD123 package  
5 Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
IF  
Parameter  
Conditions  
Min  
Max  
Unit  
forward current  
-
-
250  
mA  
IZSM  
non-repetitive peak reverse current  
see Table 8, 9  
and 10  
[1]  
PZSM  
Ptot  
non-repetitive peak power  
dissipation  
-
40  
W
[2]  
[3]  
total power dissipation  
Tamb ≤ 25 °C  
-
350  
mW  
mW  
-
590  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
Tamb  
Tstg  
−55  
−65  
+150  
+150  
°C  
°C  
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
6 Thermal characteristics  
Table 6. Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
350  
210  
55  
Unit  
K/W  
K/W  
K/W  
[1]  
[2]  
[3]  
Rth(j-a)  
thermal resistance from junction in free air  
-
-
-
-
-
-
to ambient  
Rth(j-sp)  
thermal resistance from junction  
to solder point  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[3] Soldering point of cathode tab.  
7 Characteristics  
Table 7. Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[1]  
VF  
forward voltage  
IF = 10 mA  
-
-
0.9  
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.  
BZT52_SER  
All information provided in this document is subject to legal disclaimers.  
© Nexperia B.V. 2017. All rights reserved.  
Product data sheet  
Rev. 1 — 16 March 2017  
3 / 13  
 
 
 
 
 
 
 
 
 

与BZT52-C75相关器件

型号 品牌 描述 获取价格 数据表
BZT52-C75-AU PANJIT SURFACE MOUNT SILICON ZENER DIODES

获取价格

BZT52-C75D3 VISHAY DIODE 75 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltag

获取价格

BZT52-C75-D3 VISHAY Zener Diode, 75V V(Z), 5%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2

获取价格

BZT52-C75D4 VISHAY DIODE 75 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltag

获取价格

BZT52-C75-D4 VISHAY Zener Diode, 75V V(Z), 5%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2

获取价格

BZT52C75-E3-08 VISHAY Small Signal Zener Diodes

获取价格