Datasheet > BZT52-C30J

BZT52-C30J

更新时间： 2022-09-29 18:26:52

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	193K
描述
DIODE ZENER 30V 350MW SOD123

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中文翻译

获取价格

数据手册

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BZT52-C30J 数据手册

Nexperia

BZT52 series

Single Zener diodes in a SOD123 package

5 Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

I_F

Parameter

Conditions

Min

Max

Unit

forward current

250

I_ZSM

non-repetitive peak reverse current

see Table 8, 9

and 10

[1]

P_ZSM

P_tot

non-repetitive peak power

dissipation

[2]

[3]

total power dissipation

T_amb≤ 25 °C

350

590

T_j

junction temperature

ambient temperature

storage temperature

150

T_amb

T_stg

−55

−65

+150

°C

[1] t_p= 100 μs; square wave; T_j= 25 °C prior to surge.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm^2.

6 Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

350

210

Unit

K/W

[1]

[2]

[3]

R_th(j-a)

thermal resistance from junction in free air

to ambient

R_th(j-sp)

thermal resistance from junction

to solder point

[1] Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².

[3] Soldering point of cathode tab.

7 Characteristics

Table 7. Characteristics

T_j= 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

[1]

V_F

forward voltage

I_F= 10 mA

0.9

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

BZT52_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 16 March 2017

3 / 13

1 234 5 6 7...13

中文翻译

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