Datasheet > BZT52-B10J

BZT52-B10J

更新时间： 2023-12-18 00:00:00

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描述
DIODE ZENER 10V 590MW SOD123

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BZT52-B10J 数据手册

Nexperia

BZT52-B series

Single Zener diodes in a SOD123 package

Table 9.ꢀCharacteristics per type; BZT52-B27 to BZT52-B51

T_j= 25 °C unless otherwise specified.

BZT52 Sel Working

Maximum

differential

resistance

Reverse

current

Temperature Diode

coefficient

Non-

capacitance repetitive

C_d(pF)^[1]

peak reverse

-xxx

voltage

V_Z(V);

I_R(μA)

S_Z(mV/K);

current

I_ZSM(A)^[2]

r_dif(Ω)

I_Z= 2 mA

I_Z= 1 mA I_Z= 5 mA

I_Z= 5 mA

Min Max Max

26.5 27.5 250

29.4 30.6 250

32.3 33.7 250

35.3 36.7 250

38.2 39.8 300

42.1 43.9 325

46.1 47.9 325

50.0 52.0 350

Max

0.05

V_R(V) Min

Max Max

25.3 50

Max

1.0

0.9

0.8

0.7

0.6

0.5

0.4

18.9

21.0

23.1

25.2

27.3

30.1

32.9

35.7

21.4

24.4

27.4

30.4

33.4

37.6

42.0

46.6

29.4 50

33.4 45

37.4 45

41.2 45

46.6 40

51.8 40

57.2 40

100

[1] f = 1 MHz; V_R= 0 V

[2] t_p= 100 μs; T_amb= 25 °C

Table 10.ꢀCharacteristics per type; BZT52-B56 to BZT52-B75

T_j= 25 °C unless otherwise specified.

BZT52 Sel Working

Maximum

differential

resistance

Reverse

current

Temperature Diode

Non-

-xxx

voltage

coefficient

capacitance repetitive

C_d(pF)^[1]

peak reverse

current

I_ZSM(A)^[2]

V_Z(V);

I_R(μA)

S_Z(mV/K);

r_dif(Ω)

I_Z= 2 mA

I_Z= 0.5

I_Z= 2 mA

I_Z= 5 mA

Min Max Max

54.9 57.1 375

60.8 63.2 400

66.6 69.4 400

73.5 76.5 400

Max

120

140

160

175

Max

0.05

V_R(V) Min

Max Max

63.8 40

Max

0.30

0.25

0.20

39.2

43.4

47.6

52.5

52.2

58.8

65.6

73.4

71.6 35

79.8 35

88.6 35

[1] f = 1 MHz; V_R= 0 V

[2] t_p= 100 μs; T_amb= 25 °C

BZT52-B_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 20 December 2017

5 / 11

1 2 3 456 7 8...11

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