Nexperia
BZT52-B series
Single Zener diodes in a SOD123 package
5 Limiting values
Table 5.ꢀLimiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
IF
Parameter
Conditions
Min
Max
Unit
forward current
-
-
250
mA
IZSM
non-repetitive peak reverse current
see Table 8
Table 9
Table 10
[1]
PZSM
Ptot
non-repetitive peak power
dissipation
-
40
W
[2]
[3]
total power dissipation
Tamb ≤ 25 °C
-
350
mW
mW
-
590
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6 Thermal characteristics
Table 6.ꢀThermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
350
210
55
Unit
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from junction in free air
to ambient
-
-
-
-
-
-
Rth(j-sp)
thermal resistance from junction
to solder point
[1] Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
7 Characteristics
Table 7.ꢀCharacteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
VF
forward voltage
IF = 10 mA
-
-
0.9
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
BZT52-B_SER
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Product data sheet
Rev. 1 — 20 December 2017
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