Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
TYPE
NUMBER
V(BR)R (V)
at Itest
at IRSM
(A)
note 1
SZ (%/K) at Itest
V(CL)R (V)
MAX.
IR (µA)
Itest
(mA)
at VR
(V)
MIN.
MIN.
MAX.
MAX.
168
188
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
2
2
2
2
2
2
2
2
2
2
249
276
305
336
380
419
459
498
537
603
655
707
1.2
5
5
5
5
5
5
5
5
5
5
5
5
150
160
180
200
220
240
270
300
330
360
390
430
BZT03-C180
BZT03-C200
BZT03-C220
BZT03-C240
BZT03-C270
BZT03-C300
BZT03-C330
BZT03-C360
BZT03-C390
BZT03-C430
BZT03-C470
BZT03-C510
1.1
1.0
0.9
0.8
0.72
0.65
0.60
0.56
0.50
0.45
0.42
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
lead length = 10 mm
note 1
VALUE
46
UNIT
K/W
K/W
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Rth j-a
100
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 11
6