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BZG05C5V6

更新时间: 2024-11-14 20:25:15
品牌 Logo 应用领域
TEMIC 二极管
页数 文件大小 规格书
5页 47K
描述
Zener Diode, 5.6V V(Z), 7.1%, 1.25W, Silicon, Unidirectional, DO-214AC,

BZG05C5V6 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.7Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:1.25 W认证状态:Not Qualified
标称参考电压:5.6 V表面贴装:YES
技术:ZENER端子形式:C BEND
端子位置:DUAL最大电压容差:7.1%
工作测试电流:45 mABase Number Matches:1

BZG05C5V6 数据手册

 浏览型号BZG05C5V6的Datasheet PDF文件第2页浏览型号BZG05C5V6的Datasheet PDF文件第3页浏览型号BZG05C5V6的Datasheet PDF文件第4页浏览型号BZG05C5V6的Datasheet PDF文件第5页 
BZG05C...  
Silicon Z–Diodes  
Features  
Glass passivated junction  
High reliability  
Voltage range 3.3V to 15V  
Fits onto 5 mm SMD footpads  
Wave and reflow solderable  
Applications  
94 9535  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
3
Unit  
W
R
R
<30K/W, T =60 C  
P
V
Power dissipation  
thJA  
amb  
<100K/W, T =25 C  
P
V
1.25  
60  
W
thJA  
amb  
Non repetitive peak surge  
power dissipation  
t =100 s sq.pulse, T =25 C  
P
ZSM  
W
p
j
prior to surge  
Junction temperature  
T
150  
C
C
j
Storage temperature range  
T
stg  
–65...+150  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol  
Value  
30  
Unit  
K/W  
K/W  
K/W  
K/W  
Junction lead  
R
R
thJL  
mounted on epoxy–glass hard tissue, Fig. 1a  
mounted on epoxy–glass hard tissue, Fig. 1b  
150  
125  
100  
Junction ambient  
thJA  
thJA  
thJA  
R
R
mounted on Al–oxid–ceramic (Al O ), Fig. 1b  
2
3
Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =0.2A  
Type  
Symbol  
Min  
Typ  
Max  
1.2  
Unit  
V
V
F
F
TELEFUNKEN Semiconductors  
1 (5)  
Rev. A2, 24-Jun-96  

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