Datasheet > BZG05C4V3-TR3

BZG05C4V3-TR3

更新时间： 2024-11-15 19:45:55

品牌	Logo	应用领域
威世 - VISHAY		测试二极管
页数	文件大小	规格书
4页	47K
描述
Zener Diode, 4.3V V(Z), 6.9%, 1.25W,

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数据手册

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BZG05C4V3-TR3 数据手册

BZG05C...

Vishay Telefunken

Silicon Z–Diodes

Features

Glass passivated junction

High reliability

Voltage range 3.3V to 100V

Fits onto 5 mm SMD footpads

Wave and reflow solderable

15 811

Applications

Voltage stabilization

Order Instruction

Type

Ordering Code

BZG05C3V3–TR

BZG05C3V3–TR3

Remarks

Tape and Reel (1.500 pcs)

Tape and Reel (6.000 pcs)

BZG05C3V3

Absolute Maximum Ratings

T = 25 C

Parameter

Test Conditions

Type Symbol

Value

1.25

Unit

<30K/W, T =60 C

thJA

amb

Power dissipation

<100K/W, T =25 C

thJA

amb

Non repetitive peak

surge power dissipation

t =100 s sq.pulse,

T =25 C prior to surge

ZSM

Junction temperature

Storage temperature range

stg

150

–65...+150

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Test Conditions

Symbol

Value

150

125

100

Unit

K/W

thJL

thJA

mounted on epoxy–glass hard tissue, Fig. 1a

mounted on epoxy–glass hard tissue, Fig. 1b

Junction ambient

mounted on Al–oxid–ceramic (Al O ), Fig. 1b

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =0.2A

Type

Symbol Min

Typ Max Unit

1.2

Document Number 85595

Rev. 7, 09-Mar-01

www.vishay.com

1 (4)

12 3 4

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