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BZG05C3V6/2P-E3 PDF预览

BZG05C3V6/2P-E3

更新时间: 2024-11-15 03:33:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 22K
描述
DIODE 3.6 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Voltage Regulator Diode

BZG05C3V6/2P-E3 数据手册

 浏览型号BZG05C3V6/2P-E3的Datasheet PDF文件第2页 
BZG05C Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount Glass Passivated Zeners  
Zener Voltage 3.3 to 15V  
Steady State Power 1.25W  
DO-214AC (SMA)  
Cathode Band  
0.065 (1.65)  
0.049 (1.25)  
0.110 (2.79)  
0.100 (2.54)  
Mounting Pad Layout  
0.060 MIN  
(1.52 MIN)  
0.094 MAX  
(2.38 MAX)  
0.177 (4.50)  
0.157 (3.99)  
0.012 (0.305)  
0.006 (0.152)  
0.090 (2.29)  
0.078 (1.98)  
0.050 MIN  
(1.27 MIN)  
0.220 REF  
(5.58)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
MAX.  
0.208 (5.28)  
0.194 (4.93)  
Dimensions in inches and (millimeters)  
Mechanical Data  
Features  
Case: JEDEC DO-214AC molded plastic over  
passivated junction  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Terminals: Solder plated, solderable per  
• For surface mounted applications  
MIL-STD-750, Method 2026  
• Planar, oxide passivated chip junction  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Polarity: Color band denotes positive end (cathode)  
Mounting Position: Any Weight: 0.002oz., 0.064g  
Packaging Codes – Options (Antistatic):  
2P 1.8K per 7plastic Reel  
(12mm tape), 36K/carton  
2Q 7.5K per 13plastic Reel  
(12mm tape), 75K/carton  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
W
Power Dissipation(1)  
Ptot  
1.25  
Non repetitive peak surge power dissipation(2)  
Maximum junction temperature  
Storage temperature range  
PZSM  
TJ  
60  
W
150  
°C  
Tstg  
65 to +150  
30  
°C  
Typical thermal resistance junction to lead  
Maximum thermal resistance junction to ambient(1)  
RΘJL  
RΘJA  
°C/W  
°C/W  
100  
Notes: (1) Mounted on aluminum-oxide substrate  
(2) tp=100µs sq. pulse, TJ=25°C prior to surge  
Document Number 88313  
26-Apr-02  
www.vishay.com  
1

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