Datasheet > BZG04-15/TR3

BZG04-15/TR3

更新时间： 2024-11-21 03:12:51

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	77K
描述
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Transient Suppressor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZG04-15/TR3 数据手册

BZG04-Series

Vishay Semiconductors

www.vishay.com

Zener Diodes with Surge Current Specification

FEATURES

• High reliability

• Stand-off voltage range 8.2 V to 220 V

• Excellent clamping cabability

• Fast response time (typ. £ 1 ps from 0 to V_Zmin.

• AEC-Q101 qualified

)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Protection from high voltage, high energy transients

PRIMARY CHARACTERISTICS

PARAMETER

V_Zrange nom.

Test current I_ZT

V_Zspecification

Int. construction

VALUE

10 to 270

2 to 50

UNIT

Pulse current

Single

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

BZG04-series-TR3

BZG04-series-TR

TAPED UNITS PER REEL

6000 per 13" reel

MINIMUM ORDER QUANTITY

BZG04-series

6000/box

BZG04-series

1500 per 7" reel

PACKAGE

MOLDING COMPOUND MOISTURE SENSITIVITY

SOLDERING

CONDITIONS

PACKAGE NAME

WEIGHT

77 mg

FLAMMABILITY RATING

LEVEL

MSL level 1

DO-214AC

UL 94 V-0

260 °C/10 s at terminals

(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

R_thJA< 25 K/W, T_amb= 100 °C

R_thJA< 100 K/W, T_amb= 50 °C

P_tot

3000

1250

Power dissipation

P_tot

Non repetitive peak surge power

dissipation

t_p= 10/1000 μs sq.pulse,

T_j= 25 °C prior to surge

P_ZSM

300

Peak forward surge current

Junction to lead

10 ms single half sine wave

I_FSM

R_thJL

R_thJA

T_j

K/W

°C

Mounted on epoxy-glass hard tissue,fig. 1b

Mounted on epoxy-glass hard tissue, fig. 1b

Mounted on Al-oxid-ceramic (Al₂O₃), fig. 1b

150

Junction to ambient air

125

100

Junction temperature

150

Storage temperature range

Forward voltage (max.)

T_stg

V_F

- 65 to + 150

1.2

°C

I_F= 0.5 A

Rev. 2.4, 29-Nov-11

Document Number: 85594

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与BZG04-15/TR3相关器件

型号	品牌	获取价格	描述	数据表
BZG04150	VISHAY	获取价格	Trans Voltage Suppressor Diode, 300W, Unidirectional, 1 Element, Silicon, DO-214, PLASTIC,
BZG04-150	VISHAY	获取价格	Zener Diodes with Surge Current Specification
BZG04-150	SUNMATE	获取价格	3W patch zener diode SMA 150V series
BZG04-150	LGE	获取价格	Transient Voltage Suppressor
BZG04-150	NXP	获取价格	Transient voltage suppressor diodes
BZG04-150/T3	NXP	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Su
BZG04-150/TR	VISHAY	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Trans
BZG04-150/TR3	VISHAY	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Trans
BZG04-150115	NXP	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor
BZG04-150-HM3-08	VISHAY	获取价格	DIODE ZENER 150V 50A DO214AC

与BZG04-15/TR3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

BZG04-15/TR3

BZG04-15/TR3 数据手册

与BZG04-15/TR3相关器件

与BZG04-15/TR3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZG04-15/TR3

BZG04-15/TR3 数据手册

与BZG04-15/TR3相关器件

与BZG04-15/TR3相关文章

您还可以找

您在本页遇到什么问题？