Datasheet > BYV29FX-600

BYV29FX-600

更新时间： 2024-04-09 19:03:26

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	364K
描述
Enhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.

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BYV29FX-600 数据手册

WeEn Semiconductors

BYV29FX-600

Enhanced ultrafast power diode

11. Characteristics

Table 8. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 8A; T_j= 25 °C; Fig. 5

I_F= 8 A; T_j= 150 °C; Fig. 5

V_R= 600 V; T_j= 25 °C

V_R= 600 V; T_j= 100 °C

1.45

1.9

1.7

1.25

I_R

reverse current

μA

1.5

Dynamic characteristics

t_rr

reverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/s;

T_j= 25 °C; Fig. 6

17.5

1.5

3.2

I_RM

V_FRM

Q_r

peak reverse recovery

current

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/s;

T_j= 25 °C; Fig. 6

forward recovery voltage I_F= 1 A; dI_F/dt = 100 A/s;

T_j= 25 °C; Fig. 7

recovered charge

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/s;

T_j= 25 °C; Fig. 6

003aad323

(A)

time

25 %

(1)

(2)

(3)

100 %

003aac562

(V)

(1) T_j= 150 °C; typical values

(2) T_j= 150 °C; maximum values

(3) T_j= 25 °C; maximum values

Fig. 6. Reverse recovery deﬁnitions; ramp recovery

Fig. 5. Forward current as a function of forward voltage

BYV29FX-600

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Product data sheet

30 January 2018

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