BYV28-150

更新时间： 2024-11-22 22:50:23

品牌	Logo	应用领域
威世 - VISHAY		整流二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	56K
描述
GLASS PASSIVATED FAST EFFICIENT RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BYV28-150 数据手册

BYV28-50 THRU BYV28-200

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 200 Volts

Forward Current - 3.5 Amperes

FEATURES

♦ High temperature metallurgically bonded construction

♦ Glass passivated cavity-free junction

♦ Superfast recovery time for high efficiency

♦ Low forward voltage, high current capability

♦ Capable of meeting environmental standards

of MIL-S-19500

Case Style G4

1.0 (25.4)

MIN.

0.180 (4.6)

0.115 (2.9)

DIA.

♦ Hermetically sealed package

♦ Low leakage current

♦ High surge capability

0.300 (7.6)

MAX.

♦ High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.042 (1.07)

1.0 (25.4)

MIN.

0.038 (0.962)

DIA.

MECHANICAL DATA

Case: Solid glass body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

*Brazed-lead assembly is covered by Patent No. 3,930,306

Weight: 0.037 ounce, 1.04 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

BYV28-50

BYV28-100

100

BYV28-150

150

BYV28-200

200

UNITS

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

105

140

Maximum DC blocking voltage

100

150

200

Minimum reverse breakdown voltage at 100µA

V_(BR)

110

165

220

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_L=85°C

I_(AV)

3.5

Amps

Peak forward surge current

10ms single half sine-wave superimposed

on rated load (JEDEC Method) at T_J=175°C

I_FSM

90.0

Maximum instantaneous forward

voltage at 3.5A

T_J=25°C

T_J=175°C

1.1

0.89

V_F

I_R

Volts

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=165°C

1.0

150.0

µA

Maximum reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

t_rr

30.0

C_J

100.0

R_ΘJA

R_ΘJL

55.0

20.0

Typical thermal resistance _{(NOTE 3, 4)}

°C/W

°C

Operating junction and storage temperature range

T_J,T_STG

-65 to +175

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to lead at 0.375" (9.5mm) lead length with both leads attached to heatsinks

(4) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length and mounted on P.C.B.

4/98

中文翻译

下载PDF

与BYV28-150相关器件

型号	品牌	获取价格	描述	数据表
BYV28-150/20113	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier
BYV28-150/20133	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier
BYV28-150/21112	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/21113	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/21133	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/22112	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/22113	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/22133	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/30112	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/30113	NXP	获取价格	DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode

与BYV28-150相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

BYV28-150

BYV28-150 数据手册

与BYV28-150相关器件

与BYV28-150相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BYV28-150

BYV28-150 数据手册

与BYV28-150相关器件

与BYV28-150相关文章

您还可以找

您在本页遇到什么问题？