Datasheet > BYV26EGP/4E-E3

BYV26EGP/4E-E3

更新时间： 2022-12-01 20:37:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	346K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

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BYV26EGP/4E-E3 数据手册

BYV26DGP & BYV26EGP

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50mVp-p

Tj = 175 °C

Tj = 150 °C

Tj = 125 °C

0.1

Tj = 25 °C

0.1

0.01

100

0.2

0.6

1.4

1.8

2.2

2.6

3.4

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Voltage Characteristics

Figure 5. Typical Junction Capacitance

100

Tj = 175 °C

Tj = 165 °C

Tj = 125 °C

Mounted on P.C.B.

0.1

0.375” (9.5mm) Lead Length

on 0.47 x 0.47” (12 x 12mm)

Copper Pads

Tj = 25 °C

0.01

0.001

0.01

0.1

100

Percent of Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics

100

t, Pulse Duration (sec.)

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AC (DO-15)

0.034 (0.86)

0.028 (0.71)

Dia.

1.0 (25.4)

min.

0.300 (7.6)

0.230 (5.8)

0.140 (3.6)

0.104 (2.6)

Dia.

1.0 (25.4)

min.

Document Number 88554

10-Aug-05

www.vishay.com

1 234

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