Datasheet > BYV26B

BYV26B

更新时间： 2024-01-14 16:00:33

品牌	Logo	应用领域
海湾 - GULFSEMI		二极管局域网
页数	文件大小	规格书
2页	74K
描述
SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE：400V CURRENT: 1.0A

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技术参数
数据手册

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BYV26B 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.82
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	2.2 V	JESD-609代码：	e0
最大非重复峰值正向电流：	30 A	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	1 A
最大重复峰值反向电压：	1400 V	最大反向恢复时间：	0.15 µs
子类别：	Rectifier Diodes	表面贴装：	NO
端子面层：	Tin/Lead (Sn80Pb20)	Base Number Matches：	1

BYV26B 数据手册

BYV26B

SINTERED GLASS JUNCTION

FAST AVALANCHE RECTIFIER

VOLTAGE：400V

CURRENT: 1.0A

SOD-57

FEATURE

Glass passivated

High maximum operating temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

MECHANICAL DATA

Case: SOD-57 sintered glass case

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Polarity: color band denotes cathode end

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

BYV26B

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

400

280

400

Maximum DC blocking Voltage

Reverse avalanche breakdown voltage

V_(BR)R

I_FAV

500min

1.0

at IR = 0.1 mA

Maximum Average Forward Rectified

Current 3/8”lead length at Ttp =85°C

Non-repetitive Peak Forward Current at t=10ms half

sine wave

2.5

I_FSM

V_F

Maximum Forward Voltage at rated Forward Current

Non-repetitive peak reverse avalanche energy

(Note 1)

E_RSM

5.0

150.0

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25°C

Ta =165°C

(Note 2)

I_R

Maximum Reverse Recovery Time

Trr

C_d

Diode Capacitance

(Note 3)

(Note 4)

100

Typical Thermal Resistance

R_th(ja)

Tstg, Tj

°C /W

°C

Storage and Operating Junction Temperature

Note:

-65 to +175

1. R=400mA; Tj=Tjmax prior to surge; inductive load switched off

2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc

4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40μm

Rev.A1

www.gulfsemi.com

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