Datasheet > BYV26B

BYV26B

更新时间： 2024-01-18 08:19:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管
页数	文件大小	规格书
2页	54K
描述
SUPER FAST RECTIFIERS

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技术参数
数据手册

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BYV26B 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.82
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	2.2 V	JESD-609代码：	e0
最大非重复峰值正向电流：	30 A	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	1 A
最大重复峰值反向电压：	1400 V	最大反向恢复时间：	0.15 µs
子类别：	Rectifier Diodes	表面贴装：	NO
端子面层：	Tin/Lead (Sn80Pb20)	Base Number Matches：	1

BYV26B 数据手册

GALAXY ELECTRICAL

BYV26A(Z) ---BYV26E(Z)

VOLTAGE RANGE: 200 --- 1000 V

CURRENT: 1.0 A

SUPER FAST RECTIFIERS

FEATURES

Low cost

DO - 41

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easilycleaned with alcohol,Isopropanol

and similar solvents

MECHANICAL DATA

Case: JEDEC DO-41,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.012 ounces,0.34 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by20%.

BYV26A BYV26B BYV26C BYV26D BYV26E UNITS

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_DC

MaximumDC blocking voltage

1000

Maximumaverage forw ard rectified current

1.0

I_F(AV)

9.5 mmlead length,

@T_A=75

Peak forward surge current

10ms single half-sine-wave

30.0

2.5

I_FSM

superimposed on rated load @T =125

Maximuminstantaneous forw ard voltage

@ 1.0A

V_F

I_R

Maximumreverse current

@T_A=25

5.0

at rated DCblocking voltage @T_A=100

Maximumreverse recovery time (Note1)

150.0

t_rr

C_J

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

100

R_θ_JA

T_J

Operating junction temperature range

- 55 ----- + 150

Storage temperature range

T_STG

NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

www.galaxycn.com

Document Number 0264013

BLGALAXY ELECTRICAL

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