5秒后页面跳转
BYV118X-35 PDF预览

BYV118X-35

更新时间: 2024-02-19 21:25:14
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网快速恢复二极管
页数 文件大小 规格书
6页 46K
描述
Rectifier diodes Schottky barrier

BYV118X-35 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.87 V
JESD-609代码:e0最大非重复峰值正向电流:110 A
最高工作温度:150 °C最大输出电流:10 A
最大重复峰值反向电压:35 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

BYV118X-35 数据手册

 浏览型号BYV118X-35的Datasheet PDF文件第2页浏览型号BYV118X-35的Datasheet PDF文件第3页浏览型号BYV118X-35的Datasheet PDF文件第4页浏览型号BYV118X-35的Datasheet PDF文件第5页浏览型号BYV118X-35的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
BYV118F, BYV118X series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Isolated package  
VR = 35 V/ 40 V/ 45 V  
IO(AV) = 10 A  
a1  
1
a2  
3
k
2
VF 0.6 V  
GENERAL DESCRIPTION  
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended  
for use as output rectifiers in low voltage, high frequency switched mode power supplies.  
The BYV118F series is supplied in the SOT186 package.  
The BYV118X series is supplied in the SOT186A package.  
PINNING  
SOT186  
SOT186A  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k)  
case  
case  
1
2
3
anode 2 (a)  
isolated  
1
2 3  
1
2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYV118F-  
BYV118X-  
35  
35  
35  
40  
40  
40  
45  
45  
45  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
35  
35  
40  
45  
45  
VR  
T
hs 97 ˚C  
-
-
40  
10  
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
square wave; δ = 0.5;  
Ths 107 ˚C  
IFRM  
IFSM  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5;  
-
10  
A
Ths 107 ˚C  
Non-repetitive peak forward t = 10 ms  
-
-
100  
110  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
May 1998  
1
Rev 1.100  

与BYV118X-35相关器件

型号 品牌 描述 获取价格 数据表
BYV118X-40 NXP Rectifier diodes Schottky barrier

获取价格

BYV118X-45 NXP Rectifier diodes Schottky barrier

获取价格

BYV12 VISHAY Fast Silicon Mesa Rectifiers

获取价格

BYV12 BL Galaxy Electrical FAST RECOVERY RECTIFIER

获取价格

BYV12 TEMIC Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon,

获取价格

BYV12_10 VISHAY Fast Avalanche Sinterglass Diode

获取价格