Datasheet > BYV1040

BYV1040

更新时间： 2022-11-25 13:57:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		小信号肖特基二极管
页数	文件大小	规格书
4页	75K
描述
SMALL SIGNAL SCHOTTKY DIODES

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BYV1040 数据手册

BYV 10-40

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Symbol

Test Conditions

V_R= V_RRM

Min.

Typ.

Max.

0.5

Unit

I_R*

T = 25 C

T = 100 C

V_F*

I_F= 1A

I_F= 3A

0.55

0.85

T = 25 C

* Pulse test: t_p≤ 300µs δ < 2%.

DYNAMIC CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

220

T = 25 C

V_R= 0

Forward current flow in a Schottky rectifier is due to

majority carrier conduction. So reverse recovery is

not affected by stored charge as in conventional PN

junction diodes.

Nevertheless, when the device switches from for-

ward biased condition to reverse blocking state,

current is required to charge the depletion capaci-

tance of the diode.

This currentdepends only ofdiode capacitance and

external circuit impedance. Satisfactory circuit be-

haviour analysis may be performed assuming that

Schottky rectifier consists of an ideal diode in pa-

rallel with a variable capacitance equal to the junc-

tion capacitance (see fig. 5 page 4/4).

Fig.1 : Forward current versus forward

voltage at low level (typical values).

Fig.2 : Forward current versus forward

voltage at high level (typical values).

2/4

123 4

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