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BYT28-500 PDF预览

BYT28-500

更新时间: 2024-11-17 22:08:55
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
5页 46K
描述
Dual rectifier diodes ultrafast

BYT28-500 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅:不含铅
是否Rohs认证:符合生命周期:Transferred
零件包装代码:TO-220AB包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.38
Is Samacsys:N应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:55 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:500 V
最大反向恢复时间:0.06 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYT28-500 数据手册

 浏览型号BYT28-500的Datasheet PDF文件第2页浏览型号BYT28-500的Datasheet PDF文件第3页浏览型号BYT28-500的Datasheet PDF文件第4页浏览型号BYT28-500的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Dual rectifier diodes  
ultrafast  
BYT28 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
VR = 300 V/ 400 V/ 500 V  
a1  
1
a2  
3
VF 1.05 V  
IO(AV) = 10 A  
trr 60 ns  
k
2
GENERAL DESCRIPTION  
PINNING  
SOT78 (TO220AB)  
Dual, common cathode, ultra-fast,  
epitaxial rectifier diodes intended  
for use as output rectifiers in high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
The BYT28 series is supplied in the  
tab  
conventional  
leaded  
SOT78  
(TO220AB) package.  
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYT28  
-300  
300  
300  
-400  
400  
400  
-500  
500  
500  
VRRM  
VR  
Repetitive peak reverse voltage  
Continuous reverse voltage  
-
-
V
V
Tmb 147˚C  
IO(AV)  
IFSM  
Average rectified output current square wave; δ = 0.5;  
-
10  
A
(both diodes conducting)1  
Non-repetitive peak forward  
current per diode.  
Tmb 115 ˚C  
t = 10 ms  
t = 8.3 ms  
-
-
50  
55  
A
A
sinusoidal; with reapplied  
VRRM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to per diode  
-
-
-
-
-
60  
4.5  
3.0  
-
K/W  
K/W  
K/W  
heatsink  
both diodes conducting  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
1 Neglecting switching and reverse current losses.  
October 1998  
1
Rev 1.400  

BYT28-500 替代型号

型号 品牌 替代类型 描述 数据表
BYT28-500 WEEN

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Dual ultrafast power diode in the SOT78 (TO-220AB) plastic package.
BYT28-500,127 NXP

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BYT28-500

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