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BYQ28EB-100-E3/81 PDF预览

BYQ28EB-100-E3/81

更新时间: 2024-01-26 10:48:19
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
5页 143K
描述
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

BYQ28EB-100-E3/81 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.35
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.895 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:55 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

BYQ28EB-100-E3/81 数据手册

 浏览型号BYQ28EB-100-E3/81的Datasheet PDF文件第1页浏览型号BYQ28EB-100-E3/81的Datasheet PDF文件第3页浏览型号BYQ28EB-100-E3/81的Datasheet PDF文件第4页浏览型号BYQ28EB-100-E3/81的Datasheet PDF文件第5页 
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT  
www.vishay.com  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
IF = 10 A  
IF = 5 A  
1.25  
1.10  
0.895  
10  
TJ = 25 °C  
Maximum instantaneous forward voltage  
per diode  
(1)  
VF  
V
TJ = 150 °C  
TJ = 25 °C  
TJ = 100 °C  
Maximum reverse current per diode at  
working peak reverse voltage  
IR  
μA  
200  
Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM  
Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
trr  
trr  
25  
20  
9
ns  
ns  
Maximum stored charge per diode  
IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM  
Qrr  
nC  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)  
UG10  
UGF10  
UGB10  
PARAMETER  
SYMBOL  
UNIT  
BYQ28E  
BYQ28EF  
BYQ28EB  
Typical thermal resistance per diode, junction to ambient  
Typical thermal resistance per diode, junction to case  
RJA  
RJC  
50  
55  
50  
°C/W  
4.5  
6.7  
4.8  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
BYQ28E-200-E3/45  
1.80  
1.95  
1.77  
1.77  
1.80  
1.95  
1.77  
1.77  
45  
45  
45  
81  
45  
45  
45  
81  
BYQ28EF-200-E3/45  
BYQ28EB-200-E3/45  
BYQ28EB-200-E3/81  
BYQ28E-200HE3/45 (1)  
BYQ28EF-200HE3/45 (1)  
BYQ28EB-200HE3/45 (1)  
BYQ28EB-200HE3/81 (1)  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
Tape and reel  
Tube  
50/tube  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
Tape and reel  
Note  
(1)  
Automotive grade  
Revision: 02-Sep-13  
Document Number: 88549  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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