Datasheet > BYC30B-600P

BYC30B-600P

更新时间： 2022-02-26 15:01:06

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	272K
描述
Hyperfast power diode

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BYC30B-600P 数据手册

BYC30B-600P

Hyperfast power diode

31 May 2017

Product data sheet

1. General description

Hyperfast power diode in a TO263 (D2PAK) plastic package.

2. Features and benefits

•

Fast switching

•

Low leakage current

Low reverse recovery current

Reduces switching losses in associated MOSFET

3. Applications

•

Server power supplies

Telecom power supplies

EV charger

Air conditioner

Continuous Current Mode (CCM) Power Factor Correction (PFC)

4. Quick reference data

Table 1. Quick reference data

Symbol

V_R

Parameter

Conditions

Min

Typ

Max

600

Unit

reverse voltage

I_F(AV)

average forward

current

δ = 0.5 ; T_mb≤ 101 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward δ = 0.5 ; t_p= 25 µs; T_mb≤ 101 °C;

current

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave

pulse; Fig. 4

270

300

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave

pulse

Static characteristics

V_F

forward voltage

I_F= 30 A; T_j= 25 °C; Fig. 6

I_F= 30 A; T_j= 150 °C; Fig. 6

2.75

1.38

Dynamic characteristics

t_rr

reverse recovery time I_F= 1 A; V_R= 30 V; dI_F/dt = 50 A/µs;

T_j= 25 °C; Fig. 7

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 25 °C; Fig. 7

12 3 4 5 6 7...10

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