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BY397P/23 PDF预览

BY397P/23

更新时间： 2024-01-06 06:40:20
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 19K
描述
Rectifier Diode, 1 Element, 3A, 200V V(RRM),

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BY397P/23 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.83配置：SINGLE
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.25 V
最大非重复峰值正向电流：100 A元件数量：1
最高工作温度：125 °C最大输出电流：3 A
最大重复峰值反向电压：200 V子类别：Rectifier Diodes
表面贴装：NOBase Number Matches：1

BY397P/23 数据手册

 浏览型号BY397P/23的Datasheet PDF文件第2页 
BY396P thru BY399P  
Vishay Semiconductors  
formerly General Semiconductor  
Soft Recovery Fast-Switching  
Plastic Rectifier  
Reverse Voltage 100 to 800 V  
Forward Current 3.0 A  
DO-201AD  
Features  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
• High surge current capability  
1.0 (25.4)  
MIN.  
• Construction utilizes void-free molded plastic technique  
• 3.0 Ampere operation at TA=50°C with no thermal  
runaway  
0.210 (5.3)  
0.190 (4.8)  
DIA.  
• Fast switching for high efficiency  
• High temperature soldering guaranteed:  
250°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.375 (9.5)  
0.285 (7.2)  
Mechanical Data  
Case: JEDEC DO-201AD, molded plastic body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
0.052 (1.32)  
1.0 (25.4)  
MIN.  
0.048 (1.22)  
DIA.  
Weight: 0.04 oz., 1.1 g  
Packaging codes/options:  
1/Bulk - 1.5K per container, 15K per box  
4/1.4K per 13" reel, 5.6K per box  
23/1K per Ammo. mag., 9K per box  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Symbols  
VRRM  
VRMS  
BY396P BY397P BY398P  
BY399P Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
100  
70  
200  
140  
200  
400  
280  
400  
800  
560  
800  
V
V
V
Maximum DC blocking voltage  
VDC  
100  
Maximum average forward rectified current  
0.375” (9.5mm) lead lengths at TA=50°C  
IF(AV)  
3.0  
A
Peak forward surge current  
10ms single half sine-wave superimposed on  
rated load at TA=50°C  
IFSM  
100  
A
Maximum repetitive peak forward surge at f < 15 KHz  
Typical thermal resistance (1)  
IFRM  
RΘJA  
TJ  
10  
22  
A
°C/W  
°C  
Operating junction temperature range  
Storage temperature range  
-50 to +125  
-50 to +150  
TSTG  
°C  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage at 3.0A  
VF  
1.25  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA= 25°C  
TA=100°C  
10  
500  
IR  
µA  
Maximum reverse recovery time at  
IF=10mA, IR=10mA, Irr=1.0mA  
trr  
500  
ns  
Maximum forward recovery time at 100mA, di/dt = 50A/µs  
tfr  
1.0  
28  
µs  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
pF  
Notes:  
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length with both leads to heat sink  
Document Number 88542  
06-Mar-02  
www.vishay.com  
1
12

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BY397P/4 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY397P/4E VISHAY

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BY397P/4F VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY397P/4F-E3 VISHAY

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 		DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY397P/4G VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY397P/4G-E3 VISHAY

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 		DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY397P/4H VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY397P/4H-E3 VISHAY

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 		DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY397P/51 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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