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BY251GP-HE3/54 PDF预览

BY251GP-HE3/54

更新时间： 2024-11-18 19:42:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 72K
描述
DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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BY251GP-HE3/54 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-201AD
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：unknown风险等级：5.6
Base Number Matches：1

BY251GP-HE3/54 数据手册

 浏览型号BY251GP-HE3/54的Datasheet PDF文件第2页浏览型号BY251GP-HE3/54的Datasheet PDF文件第3页浏览型号BY251GP-HE3/54的Datasheet PDF文件第4页 
BY251GP thru BY255GP  
Vishay General Semiconductor  
Glass Passivated Junction Plastic Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
• Low leakage current, IR less than 0.1 μA  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
DO-201AD  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for both  
consumer and automotive applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
IR  
200 V to 1300 V  
100 A  
Case: DO-201AD, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
5.0 μA  
VF  
1.1 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
175 °C  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BY251GP BY252GP BY253GP BY254GP BY255GP UNIT  
Maximum non repetitive peak reverse voltage  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRSM  
VRRM  
VRMS  
VDC  
220  
200  
140  
200  
440  
400  
280  
400  
660  
600  
420  
600  
880  
800  
560  
800  
1430  
1300  
910  
V
V
V
V
Maximum DC blocking voltage  
1300  
Maximum average forward rectified current 10 mm lead  
length at TA = 55 °C  
IF(AV)  
IFSM  
3.0  
A
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
100  
Maximum full load reverse current, full cycle average  
10 mm lead length at TA = 55 °C  
IR(AV)  
100  
μA  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88541  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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 		DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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