Datasheet > BV2HC045EFU-C

BV2HC045EFU-C

更新时间： 2024-10-02 03:50:23

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
37页	1693K
描述
Buffer/Inverter Based Peripheral Driver,

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中文翻译

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BV2HC045EFU-C 数据手册

Datasheet

IPD Series

Automotive 2ch 45 mΩ High-Side Switch

with Variable OCD and OCD Mask Function

BV2HC045EFU-C

General Description

Key Specifications

BV2HC045EFU-C is

2-ch high-side switch for

 Power Supply Voltage Operating Range: 6 V to 19 V

automotive application. It has built-in over current

protection function, thermal shutdown protection function,

open load detection function and under voltage lockout

function. It is equipped with diagnostic output function for

abnormality detection. An external component can

arbitrarily set the over current limit and the time to limit to

achieve the optimum over current protection for the load.

 On Resistance (Tj=25°C):

 Over Current Limit:

 Standby Current (Tj=25°C):

45 mΩ (Typ)

21 A (Min)

0.5 μA (Max)

 Active Clamp Tolerance (Tj_{(START )}= 25 °C): 35 mJ

Package

HSSOP-C16

W (Typ) x D (Typ) x H (Max)

4.90 mm x 6.00 mm x 1.70 mm

Features



Dual TSD^{®(Note 1)}



AEC-Q100 Qualified^{(Note 2)}

Built-in Variable Over Current Limit Function

Built-in Variable Over Current Mask Time Setting

Function.



Built-in Open Load Detection Function.

Built-in Under Voltage Lockout Function (UVLO)

Built-in Diagnostic Output

Low On-Resistance R_ON= 45 mΩ (Typ)

Monolithic Power Management IC with Control Unit

(CMOS) and Power MOSFET on a Single Chip

Low Voltage Operation (V_BB= 4.3 V)

HSSOP-C16



(Note 1) This IC has thermal shutdown (Junction temperature detect) and

ΔTj Protection (Power-MOS steep temperature rising detect).

(Note 2) Grade 1

Applications

Resistive Load, Inductive Load, Capacitive Load



Typical Application Circuit

R_ST1PU

R_ST2PU

VBB

C_VBB

R_IN1

R_IN2

IN1

IN2

OUT1

R_ST1

ST1

ST2

MCU

R_L

R_ST2

BV2HC045EFU-C

DLY

SET

OUT2

R_L

C_DLY

RSET

GND

R_GND

D_GND

“Dual TSD^®” is a registered trademark of ROHM Co., Ltd.

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ02201-0G5G1G400010-1-2

15.Mar.2019 Rev.001

1/34

TSZ22111 • 14 • 001

12 3 4 5 6 7...37

中文翻译

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