Datasheet > BV2HD070EFU-C

BV2HD070EFU-C

更新时间： 2024-10-02 11:12:31

品牌	Logo	应用领域
罗姆 - ROHM		开关过电流保护
页数	文件大小	规格书
37页	1418K
描述
本产品是车载用2ch高边开关。内置过电流保护功能、过热保护功能、负载开路检测功能、低电压时输出OFF功能，具有异常检出时诊断输出功能。可使用外接元件任意设定过电流限制值及限制前的时间，容易实现适合负载的过电流保护。

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BV2HD070EFU-C 数据手册

Datasheet

IPD Series

Automotive 2ch 70 mΩ High-Side Switch

with Variable OCD and OCD Mask Function

BV2HD070EFU-C

General Description

Key Specifications

BV2HD070EFU-C is

2-ch high-side switch for

◼ Power Supply Voltage Operating Range: 6 V to 28 V

automotive application. It has built-in over current

protection function, thermal shutdown protection function,

open load detection function and under voltage lockout

function. It is equipped with diagnostic output function for

abnormality detection. An external component can

arbitrarily set the over current limit and the time to limit to

achieve the optimum over current protection for the load.

◼ On Resistance (Tj=25°C):

◼ Over Current Limit:

◼ Standby Current (Tj=25°C):

70 mΩ (Typ)

10 A (Min)

0.5 μA (Max)

◼ Active Clamp Tolerance (Tj_{(START )}= 25 °C): 120 mJ

Package

W (Typ) x D (Typ) x H (Max)

4.90 mm x 6.00 mm x 1.70 mm

HSSOP-C16

Features

◼

Dual TSD^{(Note 1)}

◼

AEC-Q100 Qualified^{(Note 2)}

Built-in Variable Over Current Limit Function

Built-in Variable Over Current Mask Time Setting

Function.

◼

Built-in Open Load Detection Function.

Built-in Under Voltage Lockout Function (UVLO)

Built-in Diagnostic Output

Low On-Resistance R_ON= 70 mΩ (Typ)

Monolithic Power Management IC with Control Unit

(CMOS) and Power MOSFET on a Single Chip

Low Voltage Operation (V_BB= 4.3 V)

HSSOP-C16

◼

(Note 1) This IC has thermal shutdown (Junction temperature detect) and

ΔTj Protection (Power-MOS steep temperature rising detect).

(Note 2) Grade 1

Applications

Resistive Load, Inductive Load, Capacitive Load

◼

Typical Application Circuit

R_ST1PU

R_ST2PU

VBB

C_VBB

R_IN1

R_IN2

IN1

IN2

OUT1

R_ST1

ST1

ST2

MCU

R_L

R_ST2

BV2HD070EFU-C

DLY

SET

OUT2

R_L

C_DLY

RSET

GND

R_GND

D_GND

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0G5G1G400040-1-2

02.Mar.2023 Rev.002

1/34

12 3 4 5 6 7...37

中文翻译

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