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BUX98APW PDF预览

BUX98APW

更新时间: 2024-02-13 08:01:22
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管高压
页数 文件大小 规格书
4页 47K
描述
HIGH VOLTAGE NPN POWER TRANSISTOR

BUX98APW 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CSFM-T3
Reach Compliance Code:unknown风险等级:5.63
最大集电极电流 (IC):30 A集电极-发射极最大电压:450 V
JESD-30 代码:R-CSFM-T3端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

BUX98APW 数据手册

 浏览型号BUX98APW的Datasheet PDF文件第2页浏览型号BUX98APW的Datasheet PDF文件第3页浏览型号BUX98APW的Datasheet PDF文件第4页 
BUX98APW  
®
HIGH VOLTAGE NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
HIGH CURRENT CAPABILITY  
FAST SWITCHING SPEED  
APPLICATIONS  
HIGH FREQUENCY AND EFFICENCY  
CONVERTERS  
3
2
1
LINEAR AND SWITCHING INDUSTRIAL  
EQUIPMENT  
TO-247  
DESCRIPTION  
The BUX98APW is a silicon Multiepitaxial Mesa  
NPN transistor in TO-247 plastic package. It is  
intended for use in industrial applications from  
single and three-phase mains operation.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCER  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
1000  
V
V
Collector-Emitter Voltage (RBE = 10 )  
Collector-Base Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
1000  
450  
V
7
V
24  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
36  
A
IB  
5
8
A
IBM  
Base Peak Current (tp < 5 ms)  
A
o
Ptot  
200  
W
oC  
oC  
Total Power Dissipation at Tcase < 25 C  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max Operating Junction Temperature  
1/4  
February 2002  

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