Datasheet > BUS1DJC3GWZ

BUS1DJC3GWZ

更新时间： 2024-10-03 01:23:19

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
23页	669K
描述
1ch Ultra Small High Side Load Switch

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BUS1DJC3GWZ 数据手册

Datasheet

1ch Ultra Small High Side Load Switch

BUS1DJC0GWZ

General Description

Key Specifications

Input Voltage Range:

R_ON(at V_IN=1.2V):

R_ON(at V_IN=3.3V):

Bias Current:

BUS1DJC0GWZ

and

BUS1DJC3GWZ

are

low

1.1V to 5.0V

140mꢀ (Typ)

63mꢀ (Typ)

ON-Resistance high-side power switch P-channel

MOSFETs. It comes in ultra-small package for portable

digital applications. This switch IC operates on low input

voltages ranging from 1.1V to 5.0V and exhibits a typical

ON-resistance of 63 mΩ at 3.3V. The turn ON time of the

device can be controlled to avoid inrush current.

0.35µA(Typ)

0.01μA (Typ)

-30°C to +85°C

Standby Current:

Operating Temperature Range:

Package

W(Typ) x D(Typ) x H(Max)

0.8mm x 0.8mm x 0.35mm

Features

UCSP30L1

P-MOSFET high-side load switch

Low input voltage

Ultra low bias current

Ultra low standby current

Built-in discharge circuit

Built-in soft start circuit

Built-in short circuit protection

Input logic : Active-High

Ultra small package

ESD protection

Applications

Digital cameras

Mobile phones

Smart phones

Portable devices

Digital video cameras

Typical Application Circuits

V_IN

V_OUT

C_IN

C_L

ON/OFF

GND

Figure 1. Typical Application Circuits

○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

www.rohm.co.jp

TSZ02201-0R5R0GZ00010-1-2

11.Mar.2014 Rev.001

1/20

TSZ22111・14・001

12 3 4 5 6 7...23

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