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BUK100-50GS PDF预览

BUK100-50GS

更新时间: 2024-02-01 18:56:19
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
11页 116K
描述
PowerMOS transistor TOPFET

BUK100-50GS 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistor  
TOPFET  
BUK100-50GS  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic temperature and  
overload protected power MOSFET  
in a 3 pin plastic envelope, intended  
as a general purpose switch for  
automotive systems and other  
applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Continuous drain source voltage  
Continuous drain current  
50  
15  
40  
150  
100  
V
A
W
˚C  
m  
PD  
Tj  
Total power dissipation  
Continuous junction temperature  
Drain-source on-state resistance  
RDS(ON)  
APPLICATIONS  
VIS = 10 V  
General controller for driving  
lamps  
motors  
solenoids  
heaters  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Vertical power DMOS output  
stage  
DRAIN  
Low on-state resistance  
Overload protection against  
over temperature  
Overload protection against  
short circuit load  
O/V  
CLAMP  
Latched overload protection  
reset by input  
POWER  
INPUT  
MOSFET  
10 V input level  
RIG  
Low threshold voltage  
also allows 5 V control  
Control of power MOSFET  
and supply of overload  
protection circuits  
LOGIC AND  
PROTECTION  
derived from input  
ESD protection on input pin  
Overvoltage clamping for turn  
off of inductive loads  
SOURCE  
Fig.1. Elements of the TOPFET.  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
D
S
tab  
TOPFET  
input  
drain  
2
I
P
3
source  
tab drain  
1 2 3  
November 1996  
1
Rev 1.300  

BUK100-50GS 替代型号

型号 品牌 替代类型 描述 数据表
VNP14N04 STMICROELECTRONICS

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