Datasheet > BUF634PG4

BUF634PG4

更新时间： 2024-02-07 19:55:15

品牌	Logo	应用领域
BB		放大器光电二极管
页数	文件大小	规格书
12页	249K
描述
250mA HIGH-SPEED BUFFER

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BUF634PG4 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Not Recommended	零件包装代码：	DIP
包装说明：	DIP-8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.33.00.01	Factory Lead Time：	1 week
风险等级：	7.63	Is Samacsys：	N
放大器类型：	BUFFER	最大平均偏置电流 (IIB)：	20 µA
标称带宽 (3dB)：	180 MHz	25C 时的最大偏置电流 (IIB)：	20 µA
最大输入失调电压：	100000 µV	JESD-30 代码：	R-PDIP-T8
JESD-609代码：	e4	长度：	9.81 mm
负供电电压上限：	-18 V	标称负供电电压 (Vsup)：	-15 V
功能数量：	1	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	DIP
封装等效代码：	DIP8,.3	封装形状：	RECTANGULAR
封装形式：	IN-LINE	包装方法：	TUBE
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	+-15 V
认证状态：	Not Qualified	座面最大高度：	5.08 mm
标称压摆率：	2000 V/us	子类别：	Buffer Amplifier
最大压摆率：	20 mA	供电电压上限：	18 V
标称供电电压 (Vsup)：	15 V	表面贴装：	NO
技术：	BIPOLAR	温度等级：	AUTOMOTIVE
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	7.62 mm
Base Number Matches：	1

BUF634PG4 数据手册

OUTPUT CURRENT

APPLICATION INFORMATION

The BUF634 can deliver up to ±250mA continuous output

current. Internal circuitry limits output current to approxi-

mately ±350mA—see typical performance curve “Short

Circuit Current vs Temperature”. For many applications,

however, the continuous output current will be limited by

thermal effects.

Figure 1 is a simplified circuit diagram of the BUF634

showing its open-loop complementary follower design.

V+

The output voltage swing capability varies with junction

temperature and output current—see typical curves “Output

Voltage Swing vs Output Current.” Although all four pack-

age types are tested for the same output performance using

a high speed test, the higher junction temperatures with the

DIP and SO-8 package types will often provide less output

voltage swing. Junction temperature is reduced in the DDPAK

surface-mount power package because it is soldered directly

to the circuit board. The TO-220 package used with a good

heat sink further reduces junction temperature, allowing

maximum possible output swing.

Thermal

Shutdown

200Ω

V_IN

V_O

(1)

I₁

THERMAL PROTECTION

150Ω

4kΩ

Power dissipated in the BUF634 will cause the junction

temperature to rise. A thermal protection circuit in the

BUF634 will disable the output when the junction tempera-

ture reaches approximately 175°C. When the thermal pro-

tection is activated, the output stage is disabled, allowing the

device to cool. Quiescent current is approximately 6mA

during thermal shutdown. When the junction temperature

cools to approximately 165°C the output circuitry is again

enabled. This can cause the protection circuit to cycle on and

off with a period ranging from a fraction of a second to

several minutes or more, depending on package type, signal,

load and thermal environment.

V–

Signal path indicated in bold.

Note: (1) Stage currents are set by I₁.

FIGURE 1. Simplified Circuit Diagram.

Figure 2 shows the BUF634 connected as an open-loop

buffer. The source impedance and optional input resistor,

R_S, influence frequency response—see typical curves. Power

supplies should be bypassed with capacitors connected close

to the device pins. Capacitor values as low as 0.1µF will

assure stable operation in most applications, but high output

current and fast output slewing can demand large current

transients from the power supplies. Solid tantalum 10µF

capacitors are recommended.

The thermal protection circuit is designed to prevent damage

during abnormal conditions. Any tendency to activate the

thermal protection circuit during normal operation is a sign

of an inadequate heat sink or excessive power dissipation for

the package type.

TO-220 package provides the best thermal performance.

When the TO-220 is used with a properly sized heat sink,

output is not limited by thermal performance. See Applica-

tion Bulletin AB-037 for details on heat sink calculations.

The DDPAK also has excellent thermal characteristics. Its

mounting tab should be soldered to a circuit board copper

area for good heat dissipation. Figure 3 shows typical

thermal resistance from junction to ambient as a function of

the copper area. The mounting tab of the TO-220 and

DDPAK packages is electrically connected to the V– power

supply.

High frequency open-loop applications may benefit from

special bypassing and layout considerations—see “High

Frequency Applications” at end of applications discussion.

V+

10µF

DIP/SO-8

Pinout shown

R_S

V_IN

The DIP and SO-8 surface-mount packages are excellent for

applications requiring high output current with low average

power dissipation. To achieve the best possible thermal

performance with the DIP or SO-8 packages, solder the

device directly to a circuit board. Since much of the heat is

dissipated by conduction through the package pins, sockets

will degrade thermal performance. Use wide circuit board

traces on all the device pins, including pins that are not

connected. With the DIP package, use traces on both sides

of the printed circuit board if possible.

V_O

BUF634

R_L

10µF

Optional connection for

wide bandwidth — see text.

V–

FIGURE 2. Buffer Connections.

BUF634

1...4 5 678 9 10...12

中文翻译

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与BUF634PG4相关器件

型号	品牌	获取价格	描述	数据表
BUF634T	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634TG3	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634U	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634U/2K5	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634U/2K5E4	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634U-2K5	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634U-2K5E4	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634UE4	BB	获取价格	250mA HIGH-SPEED BUFFER
BUF634U-TR	BB	获取价格	Buffer Amplifier, 1 Func, PDSO8,
BUF636A	TEMIC	获取价格	Silicon NPN High Voltage Switching Transistor

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