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BU9883FV-W

更新时间： 2024-01-26 14:36:03
品牌 Logo 应用领域
罗姆 - ROHM 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
19页 484K
描述
I2C BUS3Ports for HDMI Port Serial EEPROM

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中文翻译

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BU9883FV-W 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：5 X 6.40 MM, 1.35 MM HEIGHT, ROHS COMPLIANT, SSOP-16针数：16
Reach Compliance Code：compliant风险等级：5.62
最大时钟频率 (fCLK)：0.4 MHzJESD-30 代码：R-PDSO-G16
JESD-609代码：e2长度：5 mm
内存密度：16384 bit内存集成电路类型：EEPROM
内存宽度：8功能数量：1
端子数量：16字数：2048 words
字数代码：2000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2KX8封装主体材料：PLASTIC/EPOXY
封装代码：LSSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：1.35 mm串行总线类型：I2C
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Copper (Sn/Cu)
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：4.4 mm最长写入周期时间 (tWC)：5 ms
Base Number Matches：1

BU9883FV-W 数据手册

 浏览型号BU9883FV-W的Datasheet PDF文件第5页浏览型号BU9883FV-W的Datasheet PDF文件第6页浏览型号BU9883FV-W的Datasheet PDF文件第7页浏览型号BU9883FV-W的Datasheet PDF文件第9页浏览型号BU9883FV-W的Datasheet PDF文件第10页浏览型号BU9883FV-W的Datasheet PDF文件第11页 
Technical Note  
BU9883FV-W  
●WRITE CYCLE TIMING  
SCL0  
SDA0  
D0  
ACK  
tWR  
WRITE DATA(n)  
STOP CONDITION  
START CONDITION  
Fig.40 WRITE CYCLE TIMING  
●WRITE OPERATION  
BU9883FV-W has 2K bit EEPROM in each port, there are three BANKs, 6K bit EEPROM in this device.  
Each BANK EEPROM can be written through PORT0.  
There is no write operation through PORT1,2,3.  
When this device is accessed throgh PORT0, WPB terminal must be set to “HIGH”.  
Table1 Access port and write enable BANK  
Port0  
Port1  
Port2  
Port3  
BANK1～3  
No write operation  
No write operation  
No write operation  
●READ OPERATION  
Each BANK EEPROM can be read through each port.  
The relation ship of access port and access BANK is describe Table2.  
Table 2 Table 3  
Port0  
BANK1～3  
Port0  
Port1  
Port2  
Port3  
BANK1～3  
BANK1  
BANK2  
Port1  
Port2  
Port3  
No write operation  
No write operation  
No write operation  
BANK3  
○When EEPROM access through PORT0, P1, P0 bits in slave address appoint access BANK.  
Table 4  
P1  
0
0
P0  
0
1
P1,P0 bit and access BANK  
No bank selected  
BANK1  
1
0
BANK2  
1
1
BANK3  
Note) When P1=0, P0=0 : this device doesn’t return Acknowlege.  
○During PORT0 access, WPB terminal must be set to “HIGH”, then PORT1～3 accesses will be cancelled.  
○In accessing from PORT1～3, set WPB termianl to “LOW”  
●DEVICE OPERATION  
○START CONDITION  
・All commands are proceeded by the start condition, which is a HIGH to LOW transition of SDA0～3 when SCL0～3 is  
HIGH.  
・This device continuously monitors the SDA0～3 and SCL0～3 lines for the start condition and will not respond to any  
command until this condition has been met.  
○STOP CONDITION  
・All communications must be terminated by a stop condition, which is a LOW to HIGH transition of SDA0～3when SCL0  
～3 is HIGH.  
・The stop condition initiates internal write cycle to write the data into memory array after write sequence.  
・The stop condition is also used to place the device into the standby power mode after read sequence.  
・A stop condition can only be issued after the transmitting device has released the bus.  
○NOTICE ON WRITE COMMAND  
・In Write command, after transmit write data, if there are no stop condition, EEPROM data don’t change.  
www.rohm.com  
2009.04 - Rev.B  
8/18  
© 2009 ROHM Co., Ltd. All rights reserved.  
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