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BU900TP PDF预览

BU900TP

更新时间: 2024-01-21 23:43:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 114K
描述
NPN power TRILINTON

BU900TP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.83
最大集电极电流 (IC):5 A集电极-发射极最大电压:370 V
配置:DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):7000
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):55 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BU900TP 数据手册

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BU900TP  
NPN power TRILINTON  
Preliminary Data  
Features  
Integrated high voltage active clamping zener  
Integrated antiparallel collector-emitter diode  
Clamping energy capability 100% tested  
Very high current gain  
3
2
1
Applications  
SOT-82  
Engine ignition control  
Switching regulators  
Motor control  
Light ballast  
Figure 1.  
Internal schematic diagram  
Description  
The BU900TP is a planar, monolithic, high voltage  
power Trilinton with a built-in active zener  
clamping circuit and an antiparallel Collector to  
Emitter diode. This device has been specifically  
designed for unclamped, inductive applications  
such as Ignition systems, Switching Regulators,  
and wherever high voltage and high robustness is  
required.  
Table 1.  
Part Number  
BU900TP  
Device summary  
Marking  
Package  
Packing  
BU900TP  
SOT-82  
Tube  
August 2007  
Rev 1  
1/8  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
8

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