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BU2010-E3/45 PDF预览

BU2010-E3/45

更新时间: 2024-11-23 20:04:51
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
5页 122K
描述
RECTIFIER BRIDGE 1000V 20A BU

BU2010-E3/45 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:2.14其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):0.95 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3最大非重复峰值正向电流:240 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BU2010-E3/45 数据手册

 浏览型号BU2010-E3/45的Datasheet PDF文件第2页浏览型号BU2010-E3/45的Datasheet PDF文件第3页浏览型号BU2010-E3/45的Datasheet PDF文件第4页浏览型号BU2010-E3/45的Datasheet PDF文件第5页 
BU2006, BU2008, BU2010  
Vishay General Semiconductor  
www.vishay.com  
Enhanced isoCink+™ Bridge Rectifiers  
FEATURES  
• UL recognition file number E312394  
• Thin single in-line package  
• Glass passivated chip junction  
• Available for BU-5S lead forming option  
(part number with “5S” suffix, e.g. BU20065S)  
+
Available  
-
~
~
~
~
-
+
• Superior thermal conductivity  
isoCink+™  
Case Style BU  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances and  
white-goods applications.  
+
~
~
-
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: BU  
Package  
BU  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IF(AV)  
20 A  
VRRM  
IFSM  
600 V, 800 V, 1000 V  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
240 A  
5 μA  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 and M3 suffix meet JESD 201 class 1A whisker test  
IR  
VF at IF = 10 A  
TJ max.  
0.85 V  
150 °C  
In-line  
Polarity: as marked on body  
Circuit configuration  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BU2006  
BU2008  
800  
BU2010  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
600  
1000  
V
T
C = 61 °C (1)  
TA = 25 °C (2)  
20  
Average rectified forward current (Fig. 1, 2)  
IO  
A
3.5  
Non-repetitive peak forward surge current  
8.3 ms single sine-wave, TJ = 25 °C  
IFSM  
240  
A
Rating for fusing (t < 8.3 ms) TJ = 25 °C  
I2t  
239  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes  
(1)  
With 60 W air cooled heatsink  
Without heatsink, free air  
(2)  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.95  
0.85  
-
MAX.  
UNIT  
TA = 25 °C  
1.05  
0.95  
5.0  
350  
-
Maximum instantaneous forward  
IF = 10 A  
rated VR  
VF  
V
voltage per diode (1)  
TA = 125 °C  
TA = 25 °C  
TA = 125 °C  
Maximum reverse current per diode  
IR  
μA  
pF  
110  
95  
Typical junction capacitance per diode 4.0 V, 1 MHz  
CJ  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Revision: 29-Aug-17  
Document Number: 84804  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BU2010-E3/45 替代型号

型号 品牌 替代类型 描述 数据表
BU20105S-E3/45 VISHAY

完全替代

RECTFR BRIDGE SGL 1KV 3.5A 4PIN CASE BU-5S - Rail/Tube

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