BU1706A-T

更新时间： 2024-02-29 22:29:19

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BU1706A-T 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1706A

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope

intended for use in high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1750

850

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Fall time

P_tot

_mb≤ 25 ˚C

100

1.0

V_CEsat

I_Csat

t_f

I_C= 1.5 A; I_B= 0.3 A

1.5

0.25

I_CM= 1.5 A; I_B(on)= 0.3 A

0.6

µs

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

base

collector

emitter

tab collector

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1750

850

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

Base current peak value

Reverse base current

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

100

150

average over any 20ms period

Reverse base current peak value

Total power dissipation

Storage temperature

T_mb≤ 25 ˚C

˚C

-65

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

1.25

K/W

in free air

September 1997

Rev 1.000

12 3 4 5 6 7

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