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BU1706AX

更新时间: 2024-02-22 08:02:54
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 82K
描述
Silicon Diffused Power Transistor

BU1706AX 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.88其他特性:FORMED LEAD OPTIONS ARE AVAILABLE
外壳连接:ISOLATED最大集电极电流 (IC):5 A
集电极-发射极最大电压:850 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:32 W
最大功率耗散 (Abs):32 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):7500 ns最大开启时间(吨):1500 ns
VCEsat-Max:1 VBase Number Matches:1

BU1706AX 数据手册

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Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BU1706AX  
GENERAL DESCRIPTION  
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack  
envelope intended for use in high frequency electronic lighting ballast applications.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1750  
850  
5
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Fall time  
-
-
8
A
Ptot  
T
hs 25 ˚C  
32  
1.0  
-
W
V
VCEsat  
ICsat  
tf  
IC = 1.5 A; IB = 0.3 A  
-
1.5  
0.25  
A
ICM = 1.5 A; IB(on) = 0.3 A  
0.6  
µs  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
case  
base  
2
collector  
emitter  
b
3
case isolated  
1
2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1750  
850  
5
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Base current (DC)  
Base current peak value  
Reverse base current  
-
8
A
IB  
IBM  
-IB(AV)  
-IBM  
Ptot  
Tstg  
Tj  
-
3
5
100  
4
32  
150  
150  
A
-
A
average over any 20ms period  
-
mA  
A
Reverse base current peak value  
Total power dissipation  
Storage temperature  
-
-
Ths 25 ˚C  
W
˚C  
˚C  
-40  
-
Junction temperature  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Junction to heatsink  
Junction to ambient  
with heatsink compound  
in free air  
-
4.0  
-
K/W  
K/W  
55  
April 1994  
1
Rev 1.000  

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