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BU100 PDF预览

BU100

更新时间: 2024-11-14 09:01:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 129K
描述
Silicon NPN Power Transistors

BU100 数据手册

 浏览型号BU100的Datasheet PDF文件第2页浏览型号BU100的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU100  
DESCRIPTION  
·With TO-3 package  
·High voltage capability  
APPLICATIONS  
·For horizontal deflection output stage  
of CTV receivers and high voltalge,  
fast switching and industrial applications  
PINNING (See Fig.2)  
PIN  
DESCRIPTION  
1
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
ABSOLUTE MAXIMUM RATINGS(TC=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
150  
60  
UNIT  
V
Open base  
V
Open collector  
7
V
10  
A
ICM  
Collector current-peak  
Total power dissipation  
Junction temperature  
Storage temperature  
15  
A
PD  
TC=75  
15  
W
200  
-55~200  
Tj  
Tstg  

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