Datasheet > BU100

BU100

更新时间： 2024-01-17 19:34:14

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	129K
描述
Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BU100 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU100

DESCRIPTION

·With TO-3 package

·High voltage capability

APPLICATIONS

·For horizontal deflection output stage

of CTV receivers and high voltalge,

fast switching and industrial applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

150

UNIT

Open base

Open collector

I_CM

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

P_D

T_C=75℃

℃

200

-55~200

T_j

T_stg

12 3

中文翻译

下载PDF

与BU100相关器件

型号	品牌	获取价格	描述	数据表
BU10-005	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU10-005F	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU10-01	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU10-01F	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU10-02	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU10-02F	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU10-04	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU10-04F	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
BU1006	VISHAY	获取价格	Enhanced PowerBridge Rectifiers
BU10-06	FRONTIER	获取价格	10A SILICON SINGLE-PHASE BRIDGE RECTIFIERS