BTW68-1200N

更新时间： 2024-11-25 13:05:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	70K
描述
35A, 1200V, SCR

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中文翻译

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技术参数
数据手册

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BTW68-1200N 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	compliant
HTS代码：	8541.30.00.80	风险等级：	5.76
Base Number Matches：	1

BTW68-1200N 数据手册

BTW 68 (N)

SCR

FEATURES

HIGH SURGE CAPABILITY

HIGH ON-STATE CURRENT

HIGH STABILITY AND RELIABILITY

BTW 68 Serie :

INSULATED VOLTAGE = 2500V

(UL RECOGNIZED : E81734)

(RMS)

DESCRIPTION

The BTW 68 (N) Family of Silicon Controlled Recti-

fiers uses a high performance glass passivated

technology.

This general purpose Family of Silicon Controlled

Rectifiers is designed for power supplies up to

400Hz on resistive or inductive load.

TOP 3

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(180° conduction angle)

BTW 68

BTW 68 N

Tc=80°C

Tc=85°C

T(RMS)

Average

on-state

current

(180°

BTW 68

BTW 68 N

Tc=80°C

Tc=85°C

T(AV)

conduction angle,single phase circuit)

Non repetitive surge peak on-state current

( Tj initial = 25°C )

tp=8.3 ms

tp=10 ms

420

400

800

100

TSM

I t

A s

I t value

dI/dt

Critical rate of rise of on-state current

A/µs

Gate supply : I = 100 mA di /dt = 1 A/µs

Tstg

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

230

°C

Symbol

Parameter

BTW 68

BTW 68 / BTW 68 N

Unit

200

400

600

800

1000 1200

Repetitive peak off-state voltage

Tj = 125 °C

400

800

DRM

RRM

1/5

March 1995

12 3 4 5

中文翻译

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