Datasheet > BTT6200-1ENA

BTT6200-1ENA

更新时间： 2024-11-26 11:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动接口集成电路
页数	文件大小	规格书
46页	1416K
描述
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is especially designed to drive lamps up to 1 x R10W 24 V or 1 x R5W 12 V, as well as LEDs in the harsh automotive environment.

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中文翻译

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技术参数
数据手册

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BTT6200-1ENA 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.74	接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
湿度敏感等级：	2A	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

BTT6200-1ENA 数据手册

PROFET™+ 24 V

BTT6200-1ENA

Smart High-Side Power Switch Single Channel, 200 mΩ

Package PG-TDSO-8-31

Marking 6200-ENA

Overview

Application

•

Suitable for resistive, inductive and capacitive loads

Replaces electromechanical relays, fuses and discrete circuits

Most suitable for loads with high inrush current, such as lamps

Suitable for 12 V and 24 V trucks and transportation system

V_BAT

Voltage Regulator

OUT VS

T₁

GND

D_Z

C_VDD

C_VS

VDD

GPIO

R_DEN

DEN

Microcontroller

GPIO

OUT

R_IN

C_OUT

Bulb

R_SENSE

ADC IN

GND

C_SENSE

Application_example_Single.emf

Application Diagram with BTT6200-1ENA

Data Sheet

www.infineon.com

Rev. 1.0

2018-05-14

12 3 4 5 6 7...46

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