Datasheet > BTS917E3062A

BTS917E3062A

更新时间： 2024-02-26 08:38:02

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动驱动器
页数	文件大小	规格书
11页	179K
描述
Peripheral Driver, 1 Driver, MOS

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BTS917E3062A 技术参数

BTS 917

Block Diagramm

Terms

Inductive and overvoltage output clamp

HITFET

Short circuit behaviour

The ground lead impedance of R

should be as low as possible

Input circuit (ESD protection)

D(SCp)

D(Lim)

ESD-ZD

Source

t 2

t 0

t 1

t :

Turn on into a short circuit

Measurementpoint for I

ESD zener diodes are not designed

t :

D(lim)

for DC current > 2 mA @ V >10V.

t :

Activation of the fast temperature sensor and

regulation of the drain current to a level where

the junction temperature remains constant.

Thermal shutdown caused by the second

t :

temperature sensor, achieved by an

integrating measurement.

Page 5

02.12.1998

Semiconductor Group

1 2 3 456 7 8...11

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