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BTS712N1

更新时间： 2024-11-24 22:39:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关过载保护
页数 文件大小 规格书
14页 187K
描述
Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

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中文翻译

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BTS712N1 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：GREEN, PLASTIC, SOP-20针数：20
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：7.43
内置保护：TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数：4
接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码：R-PDSO-G20
长度：12.8 mm湿度敏感等级：3
功能数量：1端子数量：20
输出电流流向：SINK最大输出电流：1.7 A
标称输出峰值电流：0.3 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP20,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：12/24 V
认证状态：Not Qualified筛选级别：AEC-Q100
座面最大高度：2.65 mm子类别：Peripheral Drivers
最大供电电压：34 V最小供电电压：5 V
标称供电电压：12 V表面贴装：YES
技术：MOS端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：400 µs
接通时间：400 µs宽度：7.6 mm
Base Number Matches：1

BTS712N1 数据手册

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®
PROFET BTS 712 N1  
Smart Four Channel Highside Power Switch  
Product Summary  
Overvoltage Protection  
Operating voltage  
active channels:  
On-state resistance RON  
Nominal load current IL(NOM)  
Features  
Vbb(AZ)  
43  
5.0 ... 34  
V
V
•
•
•
•
•
Overload protection  
V
bb(on)  
Current limitation  
two parallel four parallel  
one  
200  
1.9  
4
Short-circuit protection  
Thermal shutdown  
Overvoltage protection  
(including load dump)  
100  
2.8  
4
50  
4.4  
4
mΩ  
A
A
Current limitation  
IL(SCr)  
•
•
•
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown  
with auto-restart and hysteresis  
Open drain diagnostic output  
1
)
•
• Open load detection in OFF-state  
•
•
•
CMOS compatible input  
Loss of ground and loss of V protection  
Electrostatic discharge (ESD) protection  
bb  
Application  
•
µC compatible power switch with diagnostic feedback  
for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitive loads  
Replaces electromechanical relays and discrete circuits  
•
•
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection  
functions.  
Pin Definitions and Functions  
Pin  
1,10,  
11,12,  
15,16,  
19,20  
3
5
7
9
18  
Symbol Function  
Positive power supply voltage. Design the  
Pin configuration (top view)  
V
bb  
wiring for the simultaneous max. short circuit  
currents from channel 1 to 4 and also for low  
thermal resistance  
V
1 •  
20 V  
19 V  
18 OUT1  
17 OUT2  
bb  
bb  
GND1/2 2  
IN1 3  
ST1/2 4  
IN2 5  
bb  
IN1  
IN2  
Input 1 .. 4, activates channel 1 .. 4 in case of  
logic high signal  
IN3  
IN4  
16 V  
bb  
GND3/4 6  
IN3 7  
ST3/4 8  
IN4 9  
15 V  
14 OUT3  
13 OUT4  
bb  
OUT1  
OUT2  
OUT3  
OUT4  
ST1/2  
Output 1 .. 4, protected high-side power output  
of channel 1 .. 4. Design the wiring for the  
max. short circuit current  
17  
14  
13  
4
12 V  
bb  
V
10  
11 V  
bb  
bb  
Diagnostic feedback 1/2 of channel 1 and  
channel 2, open drain, low on failure  
Diagnostic feedback 3/4 of channel 3 and  
channel 4, open drain, low on failure  
8
ST3/4  
2
6
GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)  
GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)  
1)  
With external current limit (e.g. resistor R =150 Ω) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
1
06.96  
1234567...14

中文翻译

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