Datasheet > BTS555_10

BTS555_10

更新时间： 2022-10-17 20:44:38

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
16页	292K
描述
Smart Highside High Current Power Switch

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中文翻译

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BTS555_10 数据手册

Data Sheet BTS555

Version b:

Reverse battery protection

R_bb

OUT

PROFET

OUT

Power

Transistor

R_IN

Logic

D_S

R_L

R_V

R_IS

Note that there is no reverse battery protection when

using a diode without additional Z-diode V_ZL, V_Zb.

Signal GND

Power GND

Version c: Sometimes a neccessary voltage clamp is

given by non inductive loads R_Lconnected to the same

switch and eliminates the need of clamping circuit:

R ≥1kΩ, R =1kΩ nominal. Add R for reverse

battery protection in applications with V above

18)

16 V ; recommended value:

R_INR_ISR_V

0.1A

R_IN|V_bb| - 12V

0.1A

|V_bb| - 12V

if D_Sis not used (or

if D_Sis

used).

To minimize power dissipation at reverse battery

OUT

PROFET

operation, the summarized current into the IN and IS

pin should be about 120mA. The current can be

provided by using a small signal diode D in parallel to

the input switch, by using a MOSFET input switch or by

proper adjusting the current through R and R .

disconnect with energized inductive

load

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (V <72 V or

<30 V if R_IN=0). For higher clamp voltages

currents at IN and IS have to be limited to 250 mA.

Version a:

OUT

PROFET

Infineon Technologies AG

2010-June-01

1...6 7 8910 11 12...16

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