Datasheet > BTS555_10

BTS555_10

更新时间： 2022-10-17 20:44:38

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
16页	292K
描述
Smart Highside High Current Power Switch

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数据手册

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BTS555_10 数据手册

Data Sheet BTS555

Truth Table

Input

current

Output

level

Current

Sense

Remark

level

Normal

=I_L/ k_ilis, up to I_IS=I_IS,lim

operation

Very high

load current

Current-

limitation

Short circuit to

GND

Over-

temperature

Short circuit to

nominal

up to V_ON=V_{ON(Fold back)}

_ISno longer proportional to I_L

V_ON> V_{ON(Fold back)}

I_{IS, lim}

if V_ON>V_ON(SC), shutdown will occure

22)

<nominal

Open load

)

Negative output

voltage clamp

Inverse load

current

L = "Low" Level

H = "High" Level

Overtemperature reset via input: I_IN=low and T < T (see diagram on page 15)

Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)

Terms

R_ONmeasurement layout (straight leads)

bIN

≤ 5.5 mm

OUT

1,5

PROFET

Sense

contacts

force contacts

Out Force

contacts

bIS

(both out

pins parallel)

OUT

Two or more devices can easily be connected in

parallel to increase load current capability.

22)

23)

Low ohmic short to V_bbmay reduce the output current I_Land can thus be detected via the sense current I_IS.

Power Transistor "OFF", potential defined by external impedance.

Infineon Technologies AG

2010-June-01

1...4 5 678 9 10...16

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