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BTS410D2 PDF预览

BTS410D2

更新时间: 2024-02-12 01:57:30
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关
页数 文件大小 规格书
14页 176K
描述
Smart Highside Power Switch

BTS410D2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 5 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.24内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PZFM-T5
JESD-609代码:e0功能数量:1
端子数量:5输出电流流向:SOURCE
标称输出峰值电流:1.8 A封装主体材料:PLASTIC/EPOXY
封装代码:ZIP封装等效代码:ZIP5,.15,.2,67TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED电源:4.5/42 V
认证状态:Not Qualified子类别:MOSFET Drivers
最大供电电压:42 V最小供电电压:4.7 V
标称供电电压:12 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:1.7 mm端子位置:ZIG-ZAG
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:85 µs
接通时间:125 µsBase Number Matches:1

BTS410D2 数据手册

 浏览型号BTS410D2的Datasheet PDF文件第2页浏览型号BTS410D2的Datasheet PDF文件第3页浏览型号BTS410D2的Datasheet PDF文件第4页浏览型号BTS410D2的Datasheet PDF文件第5页浏览型号BTS410D2的Datasheet PDF文件第6页浏览型号BTS410D2的Datasheet PDF文件第7页 
®
PROFET BTS 410 D2  
Smart Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection  
Vbb(AZ)  
65  
V
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
V
4.7 ... 42 V  
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
bb(on)  
R
ON  
220  
m  
I
I
1.8  
5
A
A
L(ISO)  
L(SCr)  
1
)
TO-220AB/5  
CMOS diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
Loss of ground and loss of V protection  
Electrostatic discharge (ESD) protection  
5
5
bb  
5
1
1
Straight leads  
Standard  
SMD  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection  
functions.  
+ V  
bb  
3
Vo lta g e  
so urc e  
Ga te  
Ove rvo lta g e  
p ro te c tio n  
Curre nt  
lim it  
p ro te c tio n  
V
Logic  
OUT  
Lim it fo r  
unc la m p e d  
ind . lo a d s  
Cha rg e p um p  
Le ve l shifte r  
Vo lta g e  
se nso r  
5
Te m p e ra ture  
se nso r  
Re c tifie r  
IN  
2
Op e n lo a d  
d e te c tio n  
Load  
Lo g ic  
ESD  
4
ST  
Sho rt c irc uit  
d e te c tio n  
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
With external current limit (e.g. resistor R =150 ) in GND connection, resistors in series with IN and ST  
GND  
connections, reverse load current limited by connected load.  
Semiconductor Group  
1
03.97  

BTS410D2 替代型号

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?4.7-42V. 220m?1.8A. Limit(scr) 5A