Datasheet > BTS307SMD

BTS307SMD

更新时间： 2024-01-29 00:11:14

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动接口集成电路
页数	文件大小	规格书
12页	273K
描述
Buffer/Inverter Based Peripheral Driver

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BTS307SMD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	Base Number Matches：	1

BTS 307

Inductive Load switch-off energy

dissipation

disconnect with charged external

inductive load

high

Load

OUT

PROFET

OUT

PROFET

GND

{

If other external inductive loads L are connected to the PROFET,

additional elements like D are necessary.

Energy stored in load inductance:

E = ^/·L·I

While demagnetizing load inductance, the energy

dissipated in PROFET is

E_AS= E_bb+ E_L- E_R= V_ON(CL)·i_L(t) dt,

with an approximate solution for R_L> 0Ω:

I_L·L

2·R_L

I_L·R_L

|V_OUT(CL)|

E =

·(V_bb+|V_OUT(CL)|)· ln (1+

)

Semiconductor Group

2003-Oct-01

1...4 5 678 9 10...12

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