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BTS308E3062A PDF预览

BTS308E3062A

更新时间: 2024-09-24 21:12:23
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动接口集成电路
页数 文件大小 规格书
14页 291K
描述
Buffer/Inverter Based Peripheral Driver, 1 Driver, 1.3A, MOS, PSSO4, TO-220AB, 5 PIN

BTS308E3062A 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-263, SMSIP5H,.6,67TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.33
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G4
长度:9.9 mm功能数量:1
端子数量:4输出电流流向:SINK
最大输出电流:1.18 A标称输出峰值电流:1.3 A
封装主体材料:PLASTIC/EPOXY封装代码:TO-263
封装等效代码:SMSIP5H,.6,67TB封装形状:RECTANGULAR
封装形式:SMALL OUTLINE电源:12/24 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:34 V最小供电电压:4.7 V
标称供电电压:24 V表面贴装:YES
技术:MOS端子形式:GULL WING
端子节距:1.7 mm端子位置:SINGLE
断开时间:55 µs接通时间:50 µs
宽度:9.2 mmBase Number Matches:1

BTS308E3062A 数据手册

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®
PROFET BTS 308  
Smart Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection  
Vbb(AZ)  
60  
V
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
V
4.7 ... 34 V  
Operating voltage  
On-state resistance  
Load current (ISO)  
bb(on)  
R
ON  
300  
1.3  
mΩ  
I
A
L(ISO)  
1
)
TO-220AB/5  
Open drain diagnostic output  
Open load detection in OFF-state  
CMOS compatible input  
5
5
5
Loss of ground and loss of V protection  
bb  
1
1
Straight leads  
Standard  
SMD  
Electrostatic discharge (ESD) protection  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
Most suitable for inductive loads  
Replaces electromechanical relays, fuses and discrete circuits  
Fast switching  
Not suitable for lamp loads  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
3
5
Voltage  
source  
Gate  
protection  
Overvoltage  
protection  
Current  
limit  
VLogic  
OUT  
Limit for  
Charge pump  
Level shifter  
Voltage  
sensor  
unclamped  
ind. loads  
Temperature  
sensor  
Rectifier  
IN  
2
4
Open load  
detection  
Load  
Logic  
ESD  
ST  
Short circuit  
detection  
PROFET  
GND  
1
Load GND  
Signal GND  
1
)
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
Page 1 of 14  
2003-Oct-01  

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