Datasheet > BTS3118N_08

BTS3118N_08

更新时间： 2024-09-24 09:01:47

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
11页	262K
描述
Smart Low Side Power Switch

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中文翻译

获取价格

数据手册

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BTS3118N_08 数据手册

Smart Low Side Power Switch

HITFET BTS 3118N

Product Summary

Features

Drain source voltage

On-state resistance

Nominal load current

Clamping energy

S Logic Level Input

100

2.17

S Input Protection (ESD)

S Thermal shutdown

• Green product (RoHS compliant)

S Overload protection

S Short circuit protection

S Overvoltage protection

S Current limitation

DS(on)

D(Nom)

250 mJ

S Analog driving possible

VPS05163

Application

All kinds of resistive, inductive and capacitive loads in switching

or linear applications

µC compatible power switch for 12 V DC applications

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded

protection functions.

Vbb

Drain

HITFET

Pin 2 and 4 (TAB)

Current

Limitation

Overvoltage-

Protection

Gate-Driving

Unit

Pin 1

Over-

temperature

Protection

Overload

Protection

Short circuit

Protection

ESD

Pin 3

Source

Datasheet

Rev. 1.3, 2008-04-14

12 3 4 5 6 7...11

中文翻译

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