Datasheet > BTB772NUT3

BTB772NUT3

更新时间： 2024-11-28 01:21:03

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
6页	283K
描述
Low Vcesat PNP Epitaxial Planar Transistor

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中文翻译

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数据手册

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BTB772NUT3 数据手册

Spec. No. : C631T3

Issued Date : 2017.04.18

Revised Date:

CYStech Electronics Corp.

Page:1/6

Low Vcesat PNP Epitaxial Planar Transistor

BVCEO

-30V

-3A

BTB772NUT3

Features

• Low VCE(sat), typically -0.2 V at IC / IB = -2A / -0.2A

• Excellent current gain characteristics

• Complementary to BTD882NUT3

• Pb-free lead plating and halogen-free package

Symbol

Outline

BTB772NUT3

TO-126

B：Base

C：Collector

E：Emitter

E C B

Ordering Information

Device

Package

TO-126

(Pb-free lead plating package)

Shipping

200 pcs / bag, 3,000 pcs/box ,

30,000 pcs/carton

BTB772NUT3-X-BL-X

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton

Product rank, zero for no rank products

Product name

BTB772NUT3

CYStek Product Specification

12 3 4 5 6

中文翻译

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