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BTB857T3-0-UC-G PDF预览

BTB857T3-0-UC-G

更新时间: 2024-11-28 01:12:15
品牌 Logo 应用领域
全宇昕 - CYSTEKEC /
页数 文件大小 规格书
5页 243K
描述
Low Vcesat PNP Epitaxial Planar Transistor

BTB857T3-0-UC-G 数据手册

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Spec. No. : C811T3  
Issued Date : 2017.01.18  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/5  
Low Vcesat PNP Epitaxial Planar Transistor  
BTB857T3  
Features  
Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A  
Excellent DC current gain characteristics  
Wide SOA  
RoHS compliant package  
Symbol  
Outline  
BTB857T3  
TO-126  
BBase  
CCollector  
EEmitter  
E C B  
Ordering Information  
Device  
Package  
TO-126  
Shipping  
200 pcs / bag, 3,000 pcs/box  
30,000 pcs/carton  
BTB857T3-0-BL-G  
BTB857T3-0-UC-G  
(Pb-free lead plating and halogen-free  
package)  
60 pcs/ tube, 32 tubes/box  
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and  
green compound products  
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton ; UC : tube, 60 pcs/tube,  
32 tubes/box  
Product rank, zero for no rank products  
Product name  
BTB857T3  
CYStek Product Specification  

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