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BTB16H-600BW3G PDF预览

BTB16H-600BW3G

更新时间： 2024-11-17 20:00:07
品牌 Logo 应用领域
安森美 - ONSEMI 三端双向交流开关
页数 文件大小 规格书
6页 143K
描述
TRIAC 16A 600V TO-220AB

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中文翻译

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BTB16H-600BW3G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：not_compliant风险等级：5.82
Base Number Matches：1

BTB16H-600BW3G 数据手册

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BTB16-600BW3G,  
BTB16-700BW3G,  
BTB16-800BW3G  
Triacs  
Silicon Bidirectional Thyristors  
http://onsemi.com  
Designed for high performance full-wave ac control applications  
where high noise immunity and high commutating di/dt are required.  
TRIACS  
16 AMPERES RMS  
600 thru 800 VOLTS  
Features  
• Blocking Voltage to 800 V  
• On-State Current Rating of 16 A RMS at 80°C  
• Uniform Gate Trigger Currents in Three Quadrants  
• High Immunity to dV/dt − 1500 V/ms minimum at 125°C  
• Minimizes Snubber Networks for Protection  
• Industry Standard TO-220AB Package  
• High Commutating dI/dt − 7.5 A/ms minimum at 125°C  
• These are Pb−Free Devices  
MT2  
MT1  
G
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
BTB16−xBWG  
TO−220AB  
CASE 221A  
STYLE 4  
Rating  
Symbol  
Value  
Unit  
AYWW  
1
2
Peak Repetitive Off−State Voltage (Note 1)  
J
V
V
DRM,  
RRM  
3
(T = −40 to 125°C, Sine Wave,  
V
50 to 60 Hz, Gate Open)  
x
A
Y
WW  
G
= 6, 7 or 8  
BTB16−600BW3G  
600  
700  
800  
= Assembly Location  
= Year  
BTB16−700BW3G  
BTB16−800BW3G  
= Work Week  
= Pb−Free Package  
On-State RMS Current  
I
16  
A
A
T(RMS)  
(Full Cycle Sine Wave, 60 Hz, T = 80°C)  
C
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
C
I
170  
TSM  
PIN ASSIGNMENT  
T
= 25°C)  
1
2
3
4
Main Terminal 1  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
120  
A sec  
Main Terminal 2  
Gate  
Non−Repetitive Surge Peak Off−State  
V
V
V
V
DSM/  
RSM  
DSM/ RSM  
Voltage (T = 25°C, t = 8.3 ms)  
V
+100  
J
Main Terminal 2  
Peak Gate Current (T = 125°C, t ≤ 20 ms)  
I
4.0  
A
J
GM  
Average Gate Power (T = 125°C)  
P
1.0  
W
°C  
°C  
J
G(AV)  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
−40 to +125  
−40 to +150  
ORDERING INFORMATION  
T
stg  
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BTB16−600BW3G TO−220AB  
(Pb−Free)  
50 Units / Rail  
50 Units / Rail  
50 Units / Rail  
BTB16−700BW3G TO−220AB  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
BTB16−800BW3G TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and  
soldering details, please download the ON Semicon-  
ductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
May, 2009 − Rev. 2  
BTB16−600BW3/D  
123456

中文翻译

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