Datasheet > BTB1240I3

BTB1240I3

更新时间： 2024-11-23 06:44:27

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	144K
描述
Low Vcesat PNP Epitaxial Planar Transistor

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数据手册

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BTB1240I3 数据手册

Spec. No. : C812I3

Issued Date : 2003.07.03

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

Low Vcesat PNP Epitaxial Planar Transistor

BTB1240I3

Features

• Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A

• Excellent current gain characteristics

• Complementary to BTD1862I3

Symbol

Outline

BTB1240I3

TO-251

B：Base

C：Collector

E：Emitter

B C E

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

V^CBO

V^CEO

V^EBO

I^C

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation (T^A=25℃)

Power Dissipation (T^C=25℃)

-2

I^CP

-5

(Note)

°C

Junction Temperature

Storage Temperature

150

-55~+150

Tstg

Note Single Pulse , Pw=10ms

BTB1240I3

CYStek Product Specification

12 3 4

中文翻译

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