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BTA312B-800B PDF预览

BTA312B-800B

更新时间: 2024-11-22 17:01:07
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 421K
描述
Planar passivated high commutation three quadrant triac in a?TO263 (D2PAK) surface mountable plast

BTA312B-800B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.57
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:12 A参考标准:IEC-60134
断态重复峰值电压:800 V表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

BTA312B-800B 数据手册

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BTA312B-800B  
3Q Hi-Com Triac  
Rev.02 - 29 April 2019  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable  
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt  
can occur. This "series B" triac will commutate the full RMS current at the maximum rated junction  
temperature without the aid of a snubber.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with maximum false trigger immunity  
High voltage capability  
Less sensitive gate for high noise immunity  
Planar passivated for voltage ruggedness and reliability  
Surface mountable package  
Triggering in three quadrants only  
Very high immunity to false turn-on by dV/dt  
3. Applications  
Electronic thermostats (heating and cooling)  
High power motor controls e.g. washing machines and vacuum cleaners  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
800  
V
RMS on-state current  
full sine wave; Tmb ≤ 100 °C;  
Fig. 1; Fig. 2; Fig. 3  
-
-
-
-
12  
A
A
non-repetitive peak on-  
state current  
full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
Fig 4; Fig 5  
100  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
-
-
110  
125  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
-
50  
mA  

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