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BTA201W-600E,115 PDF预览

BTA201W-600E,115

更新时间: 2024-11-20 21:13:35
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关光电二极管
页数 文件大小 规格书
12页 184K
描述
BTA201W-600E

BTA201W-600E,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-73包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.23
外壳连接:MAIN TERMINAL 2配置:SINGLE
关态电压最小值的临界上升速率:600 V/us最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.5 V最大维持电流:12 mA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
最大漏电流:0.5 mA湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:1 A
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BTA201W-600E,115 数据手册

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BTA201W-600E  
3Q Hi-Com Triac  
15 October 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated high commutation triac in a SOT223 surface mounted plastic package.  
This "series E" triac balances the requirements of commutation performance and gate  
sensitivity and is intended for interfacing with low power drivers and logic ICs including  
microcontrollers.  
1.2 Features and benefits  
3Q technology for improved noise immunity  
Direct triggering from low power drivers and logic ICs  
High commutation capability with sensitive gate  
High immunity to false turn-on by dV/dt  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Sensitive gate for easy logic level triggering  
Surface mountable package  
Triggering in three quadrants only  
1.3 Applications  
General purpose motor control  
Small loads in washing machines  
Solenoid drivers  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
ITSM  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
-
-
-
-
12.5  
1
A
A
state current  
tp = 20 ms; Fig. 4; Fig. 5  
IT(RMS)  
RMS on-state current  
full sine wave; Tsp ≤ 106 °C; Fig. 1;  
Fig. 2; Fig. 3  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
1
-
10  
mA  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 

BTA201W-600E,115 替代型号

型号 品牌 替代类型 描述 数据表
BTA201W-600E WEEN

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